naina semiconductor ltd. mbr60045ct thru mbr600100ctr 1 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com silicon schottky diode, 600a features ? guard ring protection ? low forward voltage drop ? high surge current capability ? up to 100v v rrm maximum ratings (t j = 25 o c unless otherwise specified) parameter symbol conditions mbr60045ct (r) mbr60060ct (r) mbr60080ct (r) mbr600100c t(r) units repetitive peak reverse voltage v rrm 45 60 80 100 v rms reverse voltage v rms 32 42 56 70 v dc blocking voltage v dc 45 60 80 100 v average forward current i f(av) t c 100 o c 600 600 600 600 a non-repetitive forward surge current, half sine- wave i fsm t c = 25 o c t p = 8.3 ms 4000 4000 4000 4000 a electrical characteristics (t j = 25 o c unless otherwise specified) parameter symbol conditions mbr60045ct (r) mbr60060ct (r) mbr60080ct (r) mbr600100c t(r) units dc forward voltage v f i f = 300 a t j = 25 o c 0.75 0.85 0.88 0.88 v dc reverse current i r v r = 20 v t j = 25 o c 1 1 1 1 ma v r = 20 v t j = 125 o c 20 20 20 20 thermal characteristics (t j = 25 o c unless otherwise specified) parameter symbol mbr60045ct (r) mbr60060ct (r) mbr60080ct (r) mbr600100c t(r) units thermal resistance junction to case r thj-c 0.12 0.12 0.12 0.12 o c/w operating, storage temperature range t j , t stg - 40 to +165 - 40 to +165 - 40 to +165 - 40 to +165 o c twin tower package http://www..net/ datasheet pdf - http://www..net/
naina semiconductor ltd. mbr60045ct thru mbr600100ctr 2 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com package outline all dimensions in mm ordering table mbr 600 45 ct 1 2 3 4 1 C device type > mbr = schottky barrier diode module 2 C current rating = i f(av) 3 C voltage = v rrm 4 C polarity > ct = normal (cathode to base) > ctr = reverse (anode to base) http://www..net/ datasheet pdf - http://www..net/
|
